NTJD4001NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

FET Feature :

Standard

Number of Elements :

2

Threshold Voltage :

1.2V

Turn On Delay Time :

17 ns

JESD-609 Code :

e3

Voltage - Rated DC :

30V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

33pF @ 5V

Factory Lead Time :

12 Weeks

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Rise Time :

23ns

Surface Mount :

yes

Pin Count :

6

Fall Time (Typ) :

23 ns

Current Rating :

250mA

Turn-Off Delay Time :

94 ns

Published :

2007

Package / Case :

6-TSSOP, SC-88, SOT-363

Operating Temperature :

-55°C~150°C TJ

Height :

1mm

Max Power Dissipation :

272mW

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 10mA, 4V

Drain to Source Breakdown Voltage :

30V

FET Type :

2 N-Channel (Dual)

Contact Plating :

Tin

Power Dissipation :

272mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Nominal Vgs :

1.2 V

Number of Pins :

6

Number of Terminations :

6

Length :

2.2mm

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

250mA

Resistance :

1Ohm

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1.5V @ 100μA

Width :

1.35mm

Gate Charge (Qg) (Max) @ Vgs :

1.3nC @ 5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)