NTJD4105CT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Surface Mount :

yes

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

46pF @ 20V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-8V

Base Part Number :

NTJD4105C

Radiation Hardening :

No

Turn On Delay Time :

83 ns

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

630mA 775mA

Length :

2.2mm

Width :

1.35mm

Max Power Dissipation :

270mW

REACH SVHC :

No SVHC

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Continuous Drain Current (ID) :

775mA

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1mm

Threshold Voltage :

920mV

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Nominal Vgs :

920 mV

Pin Count :

6

Factory Lead Time :

19 Weeks

Number of Elements :

2

Number of Terminations :

6

Current Rating :

630mA

Gate to Source Voltage (Vgs) :

8V

Feedback Cap-Max (Crss) :

5 pF

Drain to Source Voltage (Vdss) :

20V 8V

Rise Time :

23ns

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Package / Case :

6-TSSOP, SC-88, SOT-363

Power Dissipation :

550mW

Resistance :

220mOhm

Terminal Form :

Gull wing

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

375m Ω @ 630mA, 4.5V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

50 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

36 ns

FET Type :

N and P-Channel

RoHS Status :

ROHS3 Compliant