NTJD1155LT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

2.2mm

JESD-609 Code :

e3

Surface Mount :

yes

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Published :

2004

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

1V

Height :

1mm

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

400mW

FET Feature :

Standard

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-8V

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

FET Type :

N and P-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Threshold Voltage :

1V

Pin Count :

6

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

175m Ω @ 1.2A, 4.5V

Power Dissipation :

400mW

Number of Elements :

2

Continuous Drain Current (ID) :

1.3A

Vgs(th) (Max) @ Id :

1V @ 250μA

Factory Lead Time :

15 Weeks

Package / Case :

6-TSSOP, SC-88, SOT-363

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

NTJD1155

Number of Pins :

6

Element Configuration :

Dual

Width :

1.35mm

Pbfree Code :

yes

Current Rating :

630mA

Drain to Source Voltage (Vdss) :

8V

Resistance :

130mOhm