NST857BF3T5G
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- Mfr.Part #
- NST857BF3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-1123
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT1123
- Stock
- 7,999
- In Stock ：
- 7,999
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 50V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Published :
- 2008
- Power - Max :
- 290mW
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 347mW
- Package / Case :
- SOT-1123
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Power Dissipation :
- 347mW
- Terminal Form :
- Flat
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Surface Mount :
- yes
- Gain Bandwidth Product :
- 100MHz
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 2 Weeks
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Elements :
- 1
- Datasheets
- NST857BF3T5G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-1123 Tape & Reel (TR) Surface Mount
NST857BF3T5G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.When VCE saturation is 700mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.A maximum collector current of 100mA volts can be achieved.
NST857BF3T5G Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 700mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
NST857BF3T5G Applications
There are a lot of ON Semiconductor
NST857BF3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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