NST847BMX2T5G
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- Mfr.Part #
- NST847BMX2T5G
- Manufacturer
- onsemi
- Package / Case
- 0402 (1006 Metric)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A 3X2DFN
- Stock
- 17,669
- In Stock ：
- 17,669
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Package / Case :
- 0402 (1006 Metric)
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- Product Category :
- Bipolar Transistors - BJT
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA, 5V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Power - Max :
- 225 mW
- Brand :
- onsemi
- Supplier Device Package :
- 3-X2DFN (1x0.6)
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Product Type :
- BJTs - Bipolar Transistors
- Current - Collector Cutoff (Max) :
- 15nA (ICBO)
- RoHS :
- Details
- Current - Collector (Ic) (Max) :
- 100 mA
- Manufacturer :
- onsemi
- Subcategory :
- Transistors
- Product Status :
- Active
- Frequency - Transition :
- 100MHz
- Transistor Type :
- NPN
- Packaging :
- MouseReel
- Datasheets
- NST847BMX2T5G
NPN -55°C ~ 150°C (TJ) 15nA (ICBO) 0402 (1006 Metric) MouseReel Surface Mount
NST847BMX2T5G Overview
DC current gain in this device equals 200 @ 2mA, 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.Product comes in 3-X2DFN (1x0.6) supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
NST847BMX2T5G Features
the DC current gain for this device is 200 @ 2mA, 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the supplier device package of 3-X2DFN (1x0.6)
NST847BMX2T5G Applications
There are a lot of onsemi
NST847BMX2T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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