NST857BDP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Radiation Hardening :

No

Transistor Type :

2 PNP (Dual)

Collector Emitter Voltage (VCEO) :

45V

Gain Bandwidth Product :

100MHz

Number of Terminations :

6

Max Collector Current :

100mA

Polarity :

PNP

Package / Case :

SOT-963

Power - Max :

350mW

Emitter Base Voltage (VEBO) :

6V

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Length :

1.05mm

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Power Dissipation :

420mW

Mounting Type :

Surface Mount

Published :

2008

Number of Elements :

2

Height :

400μm

Width :

850μm

Frequency :

100MHz

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

-300mV

Transition Frequency :

100MHz

Collector Emitter Breakdown Voltage :

45V

Pbfree Code :

yes

Surface Mount :

yes

ECCN Code :

EAR99

Element Configuration :

Dual

Pin Count :

6

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

700mV @ 5mA, 100mA

Max Power Dissipation :

420mW

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

15nA ICBO

Factory Lead Time :

8 Weeks

Collector Base Voltage (VCBO) :

50V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)