NST856BF3T5G

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Mfr.Part #
NST856BF3T5G
Manufacturer
onsemi
Package / Case
SOT-1123
Datasheet
Download
Description
TRANS PNP 65V 0.1A SOT1123
Stock
43,506
In Stock :
43,506

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
5V
Radiation Hardening :
No
Package / Case :
SOT-1123
Terminal Position :
Dual
Number of Pins :
3
Polarity/Channel Type :
PNP
JESD-609 Code :
e3
Transistor Application :
AMPLIFIER
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
220 @ 2mA 5V
Surface Mount :
yes
Pbfree Code :
yes
Pin Count :
3
Number of Terminations :
3
Lead Free :
Lead Free
Operating Temperature :
-55°C~150°C TJ
Terminal Form :
Flat
Frequency :
100MHz
Factory Lead Time :
13 Weeks
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
800mV @ 5mA, 100mA
Mounting Type :
Surface Mount
Power Dissipation :
347mW
Published :
2009
Transistor Element Material :
SILICON
Max Collector Current :
100mA
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Max Power Dissipation :
347mW
Gain Bandwidth Product :
100MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
80V
Current - Collector Cutoff (Max) :
15nA ICBO
Collector Emitter Breakdown Voltage :
65V
Collector Emitter Voltage (VCEO) :
65V
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Transition Frequency :
100MHz
Terminal Finish :
Tin (Sn)
Power - Max :
290mW
Element Configuration :
Single
Number of Elements :
1
Datasheets
NST856BF3T5G
Introducing Transistors - Bipolar (BJT) - Single onsemi NST856BF3T5G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-1123, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, NST856BF3T5G pinout, NST856BF3T5G datasheet PDF, NST856BF3T5G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NST856BF3T5G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NST856BF3T5G


PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SOT-1123 Tape & Reel (TR) Surface Mount

NST856BF3T5G Overview


This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.The maximum collector current is 100mA volts.

NST856BF3T5G Features


the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 800mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


NST856BF3T5G Applications


There are a lot of ON Semiconductor
NST856BF3T5G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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