NST847AMX2T5G
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- Mfr.Part #
- NST847AMX2T5G
- Manufacturer
- onsemi
- Package / Case
- 0402 (1006 Metric)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A 3X2DFN
- Stock
- 8,000
- In Stock ：
- 8,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Category :
- Bipolar Transistors - BJT
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- Product Status :
- Active
- Packaging :
- Cut Tape
- Package / Case :
- 0402 (1006 Metric)
- RoHS :
- Details
- Power - Max :
- 225 mW
- Product Type :
- BJTs - Bipolar Transistors
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Frequency - Transition :
- 100MHz
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA, 5V
- Series :
- -
- Manufacturer :
- onsemi
- Current - Collector (Ic) (Max) :
- 100 mA
- Package :
- Tape and Reel (TR)
- Supplier Device Package :
- 3-X2DFN (1x0.6)
- Mounting Type :
- Surface Mount
- Subcategory :
- Transistors
- Current - Collector Cutoff (Max) :
- 15nA (ICBO)
- Brand :
- onsemi
- Transistor Type :
- NPN
- Datasheets
- NST847AMX2T5G
NPN -55°C ~ 150°C (TJ) 15nA (ICBO) 0402 (1006 Metric) Cut Tape Surface Mount
NST847AMX2T5G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA, 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.3-X2DFN (1x0.6) is the supplier device package for this product.This device displays a 45 V maximum voltage - Collector Emitter Breakdown.
NST847AMX2T5G Features
the DC current gain for this device is 110 @ 2mA, 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the supplier device package of 3-X2DFN (1x0.6)
NST847AMX2T5G Applications
There are a lot of onsemi
NST847AMX2T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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