NST847BDP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Factory Lead Time :

2 Weeks

Element Configuration :

Dual

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

45V

Number of Elements :

2

Power - Max :

350mW

Pbfree Code :

yes

Pin Count :

6

Transition Frequency :

100MHz

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

6V

Mounting Type :

Surface Mount

Max Collector Current :

100mA

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Package / Case :

SOT-963

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

45V

Max Power Dissipation :

420mW

Frequency :

100MHz

Terminal Form :

Flat

Gain Bandwidth Product :

100MHz

Collector Base Voltage (VCBO) :

50V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

ECCN Code :

EAR99

Transistor Type :

2 NPN (Dual)

Collector Emitter Breakdown Voltage :

45V

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

15nA ICBO

Published :

2008

Transistor Element Material :

SILICON

Polarity :

NPN

Transistor Application :

AMPLIFIER

Number of Pins :

6

Power Dissipation :

420mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V