NST847BPDP6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Factory Lead Time :

8 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Terminal Form :

Flat

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V / 220 @ 2mA 5V

JESD-609 Code :

e3

Number of Terminations :

6

Published :

2008

Package / Case :

SOT-963

Number of Elements :

2

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Voltage (VCEO) :

45V

Transition Frequency :

100MHz

Power Dissipation :

420mW

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

420mW

Transistor Element Material :

SILICON

Pin Count :

6

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

50V

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

45V

Transistor Type :

NPN, PNP

Lead Free :

Lead Free

Frequency :

100MHz

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

ECCN Code :

EAR99

Surface Mount :

yes

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Gain Bandwidth Product :

100MHz

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA / 700mV @ 5mA, 100mA

Mounting Type :

Surface Mount

Element Configuration :

Dual

Polarity :

NPN, PNP

Current - Collector Cutoff (Max) :

15nA ICBO

Power - Max :

350mW