NST847BF3T5G
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- Mfr.Part #
- NST847BF3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-1123
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT1123
- Stock
- 8,053
- In Stock ：
- 8,053
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 347mW
- Surface Mount :
- yes
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Base Part Number :
- NST847B
- Collector Base Voltage (VCBO) :
- 45V
- Gain Bandwidth Product :
- 100MHz
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Max Power Dissipation :
- 347mW
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Power - Max :
- 290mW
- Terminal Form :
- Flat
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Published :
- 2008
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Collector Current :
- 100mA
- Package / Case :
- SOT-1123
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Datasheets
- NST847BF3T5G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-1123 Tape & Reel (TR) Surface Mount
NST847BF3T5G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
NST847BF3T5G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
NST847BF3T5G Applications
There are a lot of ON Semiconductor
NST847BF3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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