NST846BF3T5G
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- Mfr.Part #
- NST846BF3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-1123
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT1123
- Stock
- 10,328
- In Stock ：
- 10,328
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Package / Case :
- SOT-1123
- Surface Mount :
- yes
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 347mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 65V
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 65V
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 347mW
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 290mW
- Emitter Base Voltage (VEBO) :
- 6V
- Radiation Hardening :
- No
- Published :
- 2009
- Datasheets
- NST846BF3T5G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-1123 Tape & Reel (TR) Surface Mount
NST846BF3T5G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
NST846BF3T5G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
NST846BF3T5G Applications
There are a lot of ON Semiconductor
NST846BF3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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