NSS40601CF8T1G

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Mfr.Part #
NSS40601CF8T1G
Manufacturer
onsemi
Package / Case
8-SMD, Flat Lead
Datasheet
Download
Description
TRANS NPN 40V 6A CHIPFET
Stock
1,035
In Stock :
1,035

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
1.4W
Width :
1.7mm
Height :
1.1mm
Published :
2007
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Finish :
Tin (Sn)
Package / Case :
8-SMD, Flat Lead
hFE Min :
200
Length :
3.1mm
Emitter Base Voltage (VEBO) :
6V
Transition Frequency :
140MHz
Power - Max :
830mW
Surface Mount :
yes
Number of Pins :
8
Collector Emitter Saturation Voltage :
135mV
ECCN Code :
EAR99
Radiation Hardening :
No
Transistor Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
8
Gain Bandwidth Product :
140MHz
Polarity/Channel Type :
NPN
Terminal Form :
C BEND
Pin Count :
8
Power Dissipation :
1.4W
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 1A 2V
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Max Collector Current :
6A
Max Breakdown Voltage :
40V
Factory Lead Time :
2 Weeks
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Turn On Time-Max (ton) :
240ns
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
135mV @ 400mA, 4A
Mounting Type :
Surface Mount
Collector Base Voltage (VCBO) :
40V
Element Configuration :
Single
Pbfree Code :
yes
Lead Free :
Lead Free
Packaging :
Tape and Reel (TR)
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Base Part Number :
NSS40601
Terminal Position :
Dual
JESD-609 Code :
e3
Frequency :
140MHz
Collector Emitter Voltage (VCEO) :
40V
Halogen Free :
Halogen Free
Collector Emitter Breakdown Voltage :
40V
Datasheets
NSS40601CF8T1G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSS40601CF8T1G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SMD, Flat Lead, Number of Pins:8, Number of Terminations:8, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Base Part Number:NSS40601, NSS40601CF8T1G pinout, NSS40601CF8T1G datasheet PDF, NSS40601CF8T1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSS40601CF8T1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSS40601CF8T1G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 8 Terminations SILICON NPN 8-SMD, Flat Lead Tape & Reel (TR) Surface Mount

NSS40601CF8T1G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1A 2V.The collector emitter saturation voltage is 135mV, which allows for maximum design flexibility.When VCE saturation is 135mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 140MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 6A volts can be achieved.

NSS40601CF8T1G Features


the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 135mV
the vce saturation(Max) is 135mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 140MHz


NSS40601CF8T1G Applications


There are a lot of ON Semiconductor
NSS40601CF8T1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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