NSS40601CF8T1G
- Mfr.Part #
- NSS40601CF8T1G
- Manufacturer
- onsemi
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS NPN 40V 6A CHIPFET
- Stock
- 1,035
- In Stock :
- 1,035
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.4W
- Width :
- 1.7mm
- Height :
- 1.1mm
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- 8-SMD, Flat Lead
- hFE Min :
- 200
- Length :
- 3.1mm
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 140MHz
- Power - Max :
- 830mW
- Surface Mount :
- yes
- Number of Pins :
- 8
- Collector Emitter Saturation Voltage :
- 135mV
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 8
- Gain Bandwidth Product :
- 140MHz
- Polarity/Channel Type :
- NPN
- Terminal Form :
- C BEND
- Pin Count :
- 8
- Power Dissipation :
- 1.4W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 6A
- Max Breakdown Voltage :
- 40V
- Factory Lead Time :
- 2 Weeks
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Time-Max (ton) :
- 240ns
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 135mV @ 400mA, 4A
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 40V
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Base Part Number :
- NSS40601
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Frequency :
- 140MHz
- Collector Emitter Voltage (VCEO) :
- 40V
- Halogen Free :
- Halogen Free
- Collector Emitter Breakdown Voltage :
- 40V
- Datasheets
- NSS40601CF8T1G

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 8 Terminations SILICON NPN 8-SMD, Flat Lead Tape & Reel (TR) Surface Mount
NSS40601CF8T1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1A 2V.The collector emitter saturation voltage is 135mV, which allows for maximum design flexibility.When VCE saturation is 135mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 140MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
NSS40601CF8T1G Features
the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 135mV
the vce saturation(Max) is 135mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 140MHz
NSS40601CF8T1G Applications
There are a lot of ON Semiconductor
NSS40601CF8T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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