NSS1C201MZ4T3G
- Mfr.Part #
- NSS1C201MZ4T3G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A SOT223
- Stock
- 7,853
- In Stock :
- 7,853
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Power - Max :
- 800mW
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Collector Emitter Voltage (VCEO) :
- 100V
- Current - Collector (Ic) (Max) :
- 2A
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 2W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Pin Count :
- 4
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- NSS1C201
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Max Collector Current :
- 2A
- Number of Terminations :
- 4
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 42 Weeks
- Gain Bandwidth Product :
- 100MHz
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 7V
- ECCN Code :
- EAR99
- Halogen Free :
- Halogen Free
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 140V
- Number of Pins :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 200mA, 2A
- Datasheets
- NSS1C201MZ4T3G

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NSS1C201MZ4T3G Overview
This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.The maximum collector current is 2A volts.
NSS1C201MZ4T3G Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 180mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSS1C201MZ4T3G Applications
There are a lot of ON Semiconductor
NSS1C201MZ4T3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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