NSS1C201MZ4T3G

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Mfr.Part #
NSS1C201MZ4T3G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 100V 2A SOT223
Stock
7,853
In Stock :
7,853

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
NPN
Power - Max :
800mW
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Published :
2008
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 500mA 2V
Collector Emitter Voltage (VCEO) :
100V
Current - Collector (Ic) (Max) :
2A
Transition Frequency :
100MHz
Max Power Dissipation :
2W
Current - Collector Cutoff (Max) :
100nA ICBO
Case Connection :
COLLECTOR
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
RoHS Status :
ROHS3 Compliant
Terminal Form :
Gull wing
Pin Count :
4
Terminal Position :
Dual
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Base Part Number :
NSS1C201
Lead Free :
Lead Free
Pbfree Code :
yes
Max Collector Current :
2A
Number of Terminations :
4
Collector Emitter Breakdown Voltage :
100V
Number of Elements :
1
Package / Case :
TO-261-4, TO-261AA
Transistor Type :
NPN
JESD-609 Code :
e3
Terminal Finish :
Tin (Sn)
Factory Lead Time :
42 Weeks
Gain Bandwidth Product :
100MHz
Element Configuration :
Single
Transistor Application :
SWITCHING
Emitter Base Voltage (VEBO) :
7V
ECCN Code :
EAR99
Halogen Free :
Halogen Free
Radiation Hardening :
No
Collector Base Voltage (VCBO) :
140V
Number of Pins :
4
Vce Saturation (Max) @ Ib, Ic :
180mV @ 200mA, 2A
Datasheets
NSS1C201MZ4T3G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSS1C201MZ4T3G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Base Part Number:NSS1C201, Number of Terminations:4, Package / Case:TO-261-4, TO-261AA, Number of Pins:4, NSS1C201MZ4T3G pinout, NSS1C201MZ4T3G datasheet PDF, NSS1C201MZ4T3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSS1C201MZ4T3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSS1C201MZ4T3G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

NSS1C201MZ4T3G Overview


This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.The maximum collector current is 2A volts.

NSS1C201MZ4T3G Features


the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 180mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz


NSS1C201MZ4T3G Applications


There are a lot of ON Semiconductor
NSS1C201MZ4T3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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