MUN2230T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

NPN - Pre-Biased

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Min Operating Temperature :

-55°C

Current Rating :

100mA

Max Output Current :

100mA

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

338mW

Resistor - Base (R1) :

1 k Ω

Radiation Hardening :

No

Transistor Application :

SWITCHING

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Polarity :

NPN

Published :

2009

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

1 k Ω

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Surface Mount :

yes

Power Dissipation :

230mW

ECCN Code :

EAR99

Pin Count :

3

Continuous Collector Current :

100mA

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

50V

Operating Supply Voltage :

50V

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

500nA

Mounting Type :

Surface Mount

Voltage - Rated DC :

50V

Terminal Position :

Dual

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

JESD-609 Code :

e3

Element Configuration :

Single

Factory Lead Time :

2 Weeks