MUN2114T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Power Dissipation :

338mW

ECCN Code :

EAR99

Element Configuration :

Single

Resistor - Base (R1) :

10 k Ω

Radiation Hardening :

No

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

500nA

Resistor - Emitter Base (R2) :

47 k Ω

Lead Free :

Lead Free

Transistor Type :

PNP - Pre-Biased

Operating Supply Voltage :

50V

Pin Count :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Collector Current :

100mA

Polarity :

PNP

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Number of Elements :

1

Max Operating Temperature :

150°C

Number of Terminations :

3

Number of Pins :

3

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

230mW

Surface Mount :

yes

Max Output Current :

100mA

hFE Min :

80

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Transistor Application :

SWITCHING

Published :

2006

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Terminal Form :

Gull wing

Voltage - Rated DC :

-50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Current Rating :

-100mA

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Max Collector Current :

100mA

Min Operating Temperature :

-55°C