MUN2114T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Continuous Collector Current :

100mA

Element Configuration :

Single

Surface Mount :

yes

Polarity :

PNP

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Emitter Base (R2) :

47 k Ω

Peak Reflow Temperature (Cel) :

260

Operating Supply Voltage :

50V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Collector Emitter Voltage (VCEO) :

50V

Max Operating Temperature :

150°C

Voltage - Rated DC :

-50V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Output Current :

100mA

Transistor Type :

PNP - Pre-Biased

Factory Lead Time :

8 Weeks

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Current - Collector Cutoff (Max) :

500nA

Pin Count :

3

Pbfree Code :

yes

Mounting Type :

Surface Mount

Number of Pins :

3

Radiation Hardening :

No

Published :

2006

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Terminal Position :

Dual

Terminal Form :

Gull wing

Power Dissipation :

338mW

Halogen Free :

Halogen Free

Lead Free :

Lead Free

Max Power Dissipation :

230mW

Min Operating Temperature :

-55°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Max Collector Current :

100mA

hFE Min :

80

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Number of Elements :

1

Resistor - Base (R1) :

10 k Ω

Current Rating :

-100mA