MUN2131T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5mA 10V

Transistor Type :

PNP - Pre-Biased

Resistor - Base (R1) :

2.2 k Ω

Current - Collector Cutoff (Max) :

500nA

Surface Mount :

yes

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

230mW

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

-50V

Published :

2013

Terminal Finish :

Tin (Sn)

Continuous Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Power Dissipation :

230mW

Resistor - Emitter Base (R2) :

2.2 k Ω

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Element Configuration :

Single

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Max Operating Temperature :

150°C

Current Rating :

-100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Number of Terminations :

3

Pbfree Code :

yes

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Pin Count :

3

Terminal Form :

Gull wing

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

RoHS Status :

ROHS3 Compliant

Polarity :

PNP

hFE Min :

8

Terminal Position :

Dual

Lead Free :

Lead Free