MUN2111T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Pin Count :

3

Length :

2.9mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Terminal Form :

Gull wing

Radiation Hardening :

No

Continuous Collector Current :

100mA

Polarity :

PNP

Height :

1.09mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

10 k Ω

Published :

2003

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Base Part Number :

MUN2111

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Max Collector Current :

100mA

Voltage - Rated DC :

-50V

Number of Terminations :

3

Collector Emitter Saturation Voltage :

250mV

Pbfree Code :

yes

Element Configuration :

Single

Weight :

7.994566mg

Operating Supply Voltage :

50V

Max Breakdown Voltage :

50V

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Current Rating :

-100mA

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

50V

Surface Mount :

yes

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Lead Free :

Lead Free

Number of Elements :

1

Resistor - Emitter Base (R2) :

10 k Ω

Current - Collector Cutoff (Max) :

500nA

Factory Lead Time :

8 Weeks

Halogen Free :

Halogen Free

Max Output Current :

100mA

hFE Min :

35

Width :

1.5mm

REACH SVHC :

No SVHC

Max Power Dissipation :

230mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Type :

PNP - Pre-Biased

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Contact Plating :

Tin

Collector Emitter Breakdown Voltage :

50V

Number of Pins :

3