MUN2113T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

ECCN Code :

EAR99

Max Operating Temperature :

150°C

Base Part Number :

MUN2113

hFE Min :

80

Operating Supply Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Width :

1.5mm

Mounting Type :

Surface Mount

Number of Pins :

3

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

250mV

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Height :

1.09mm

Collector Emitter Voltage (VCEO) :

50V

Element Configuration :

Single

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Resistor - Emitter Base (R2) :

47 k Ω

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Max Power Dissipation :

230mW

Number of Elements :

1

Max Output Current :

100mA

Voltage - Rated DC :

-50V

Pbfree Code :

yes

Transistor Type :

PNP - Pre-Biased

Min Operating Temperature :

-55°C

Number of Terminations :

3

Current - Collector Cutoff (Max) :

500nA

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

100mA

Halogen Free :

Halogen Free

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Tin (Sn)

Length :

2.9mm

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Polarity :

PNP

Power Dissipation :

338mW

Resistor - Base (R1) :

47 k Ω

Current Rating :

-100mA

Factory Lead Time :

8 Weeks

Published :

2006

Transistor Application :

SWITCHING

Max Breakdown Voltage :

50V