MUN2113T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Form :

Gull wing

Voltage - Rated DC :

-50V

Collector Emitter Saturation Voltage :

250mV

Resistor - Emitter Base (R2) :

47 k Ω

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Polarity :

PNP

Power Dissipation :

338mW

Current - Collector Cutoff (Max) :

500nA

Transistor Application :

SWITCHING

Number of Elements :

1

Pbfree Code :

yes

Width :

1.5mm

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

80

Number of Terminations :

3

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

JESD-609 Code :

e3

Lead Free :

Lead Free

Height :

1.09mm

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

230mW

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Max Output Current :

100mA

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Transistor Type :

PNP - Pre-Biased

Base Part Number :

MUN2113

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Continuous Collector Current :

100mA

Operating Supply Voltage :

50V

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Length :

2.9mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pin Count :

3

Resistor - Base (R1) :

47 k Ω

Published :

2006

Halogen Free :

Halogen Free

Max Collector Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Max Breakdown Voltage :

50V

Current Rating :

-100mA

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40