MUN2115T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Min Operating Temperature :

-55°C

Current Rating :

-100mA

Power Dissipation :

230mW

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Additional Feature :

BUILT-IN BIAS RESISTOR

Lifecycle Status :

ACTIVE (Last Updated: 2 weeks ago)

Terminal Form :

Gull wing

ECCN Code :

EAR99

Radiation Hardening :

No

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

500nA

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Resistor - Base (R1) :

10 k Ω

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Continuous Collector Current :

100mA

Polarity :

PNP

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Pin Count :

3

Published :

2012

Terminal Position :

Dual

Transistor Application :

SWITCHING

Transistor Type :

PNP - Pre-Biased

Max Collector Current :

100mA

Max Power Dissipation :

230mW

Voltage - Rated DC :

-50V

Surface Mount :

yes

Package / Case :

TO-236-3, SC-59, SOT-23-3

hFE Min :

160