MUN2115T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Radiation Hardening :

No

Halogen Free :

Halogen Free

Lead Free :

Lead Free

Surface Mount :

yes

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

230mW

Terminal Position :

Dual

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2012

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Resistor - Base (R1) :

10 k Ω

Min Operating Temperature :

-55°C

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Additional Feature :

BUILT-IN BIAS RESISTOR

Factory Lead Time :

8 Weeks

Current - Collector Cutoff (Max) :

500nA

Transistor Type :

PNP - Pre-Biased

Number of Terminations :

3

Polarity :

PNP

Number of Pins :

3

Max Operating Temperature :

150°C

Max Collector Current :

100mA

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

230mW

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

hFE Min :

160

Lifecycle Status :

ACTIVE (Last Updated: 2 weeks ago)

Pin Count :

3

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Voltage - Rated DC :

-50V

Current Rating :

-100mA