MUN2116T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Application :

SWITCHING

Element Configuration :

Single

Number of Pins :

3

Terminal Position :

Dual

Surface Mount :

yes

Additional Feature :

BUILT-IN BIAS RESISTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Resistor - Base (R1) :

4.7 k Ω

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

ECCN Code :

EAR99

Published :

2013

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Breakdown Voltage :

50V

Factory Lead Time :

8 Weeks

Pin Count :

3

Width :

1.5mm

Terminal Finish :

Tin (Sn)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lead Free :

Lead Free

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Length :

2.9mm

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP - Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Continuous Collector Current :

100mA

Pbfree Code :

yes

hFE Min :

160

Height :

1.09mm

Current Rating :

-100mA

Max Collector Current :

100mA

Number of Elements :

1

Number of Terminations :

3

Weight :

7.994566mg

Voltage - Rated DC :

-50V

Min Operating Temperature :

-55°C

Polarity :

PNP

Collector Emitter Voltage (VCEO) :

50V

Radiation Hardening :

No

Max Power Dissipation :

230mW