MUN2116T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Type :

PNP - Pre-Biased

RoHS Status :

ROHS3 Compliant

Weight :

7.994566mg

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current Rating :

-100mA

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Published :

2013

JESD-609 Code :

e3

hFE Min :

160

Min Operating Temperature :

-55°C

Length :

2.9mm

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Continuous Collector Current :

100mA

Radiation Hardening :

No

Height :

1.09mm

Number of Terminations :

3

Factory Lead Time :

8 Weeks

Max Collector Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR

Voltage - Rated DC :

-50V

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

50V

Polarity :

PNP

Max Power Dissipation :

230mW

Surface Mount :

yes

Element Configuration :

Single

Resistor - Base (R1) :

4.7 k Ω

Lead Free :

Lead Free

Number of Pins :

3

Pin Count :

3

Terminal Finish :

Tin (Sn)

Halogen Free :

Halogen Free

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Current - Collector Cutoff (Max) :

500nA

Number of Elements :

1

Width :

1.5mm

Collector Emitter Breakdown Voltage :

50V