MUN2111T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Published :

2003

Height :

1.09mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

Max Operating Temperature :

150°C

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Position :

Dual

JESD-609 Code :

e3

Weight :

7.994566mg

Collector Emitter Breakdown Voltage :

50V

Max Output Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Halogen Free :

Halogen Free

Current Rating :

-100mA

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Polarity :

PNP

Operating Supply Voltage :

50V

Resistor - Base (R1) :

10 k Ω

ECCN Code :

EAR99

Voltage - Rated DC :

-50V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Pin Count :

3

hFE Min :

35

Continuous Collector Current :

100mA

Resistor - Emitter Base (R2) :

10 k Ω

Number of Pins :

3

Max Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Surface Mount :

yes

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Width :

1.5mm

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

250mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

50V

Number of Terminations :

3

Length :

2.9mm

Base Part Number :

MUN2111

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP - Pre-Biased

Factory Lead Time :

8 Weeks

Current - Collector Cutoff (Max) :

500nA

Min Operating Temperature :

-55°C

Max Power Dissipation :

230mW

Number of Elements :

1

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260