MUN2214T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Elements :

1

Height :

1.09mm

Width :

1.5mm

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

260

Length :

2.9mm

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Terminal Form :

Gull wing

Voltage - Rated DC :

50V

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Voltage (VCEO) :

50V

JESD-609 Code :

e3

Number of Terminations :

3

Pbfree Code :

yes

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Surface Mount :

yes

Collector Emitter Saturation Voltage :

250mV

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Operating Supply Voltage :

50V

Max Collector Current :

100mA

Mounting Type :

Surface Mount

Max Output Current :

100mA

Number of Pins :

3

Current - Collector Cutoff (Max) :

500nA

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

hFE Min :

80

Contact Plating :

Tin

Resistor - Emitter Base (R2) :

47 k Ω

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN - Pre-Biased

Factory Lead Time :

8 Weeks

Base Part Number :

MUN2214

Polarity :

NPN

Published :

2007

Pin Count :

3

Continuous Collector Current :

100mA

Transistor Application :

SWITCHING

Power Dissipation :

338mW

Resistor - Base (R1) :

10 k Ω

Terminal Position :

Dual

Max Breakdown Voltage :

50V

Max Power Dissipation :

230mW

Current Rating :

100mA