MUN2212T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Elements :

1

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

3

Polarity :

NPN

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA

Resistor - Emitter Base (R2) :

22 k Ω

Pin Count :

3

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Max Operating Temperature :

150°C

Max Power Dissipation :

338mW

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

50V

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

50V

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Type :

NPN - Pre-Biased

Published :

2007

Continuous Collector Current :

100mA

Length :

2.9mm

hFE Min :

60

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

100mA

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

Number of Pins :

3

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Width :

1.5mm

Resistor - Base (R1) :

22 k Ω

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Power Dissipation :

338mW

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Height :

1.09mm

Terminal Position :

Dual

Base Part Number :

MUN2212

Collector Emitter Saturation Voltage :

250mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single