MUN2136T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Resistor - Base (R1) :

100 k Ω

Collector Emitter Breakdown Voltage :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Height :

1.09mm

hFE Min :

80

Halogen Free :

Halogen Free

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Polarity :

PNP

Element Configuration :

Single

Max Operating Temperature :

150°C

Width :

1.5mm

Transistor Application :

SWITCHING

Package / Case :

TO-236-3, SC-59, SOT-23-3

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Resistor - Emitter Base (R2) :

100 k Ω

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

230mW

Terminal Position :

Dual

Max Collector Current :

100mA

Continuous Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

2 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Radiation Hardening :

No

Pin Count :

3

Number of Elements :

1

Lead Free :

Lead Free

Number of Terminations :

3

Number of Pins :

3

ECCN Code :

EAR99

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Published :

2013

Length :

2.9mm

Pbfree Code :

yes

Weight :

7.994566mg

Transistor Type :

PNP - Pre-Biased

Mounting Type :

Surface Mount