MUN2136T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Breakdown Voltage :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Number of Terminations :

3

Published :

2013

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Factory Lead Time :

2 Weeks

ECCN Code :

EAR99

Pin Count :

3

Pbfree Code :

yes

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

80

Max Operating Temperature :

150°C

Element Configuration :

Single

Resistor - Emitter Base (R2) :

100 k Ω

JESD-609 Code :

e3

Width :

1.5mm

Weight :

7.994566mg

Max Collector Current :

100mA

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Length :

2.9mm

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Continuous Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

230mW

Resistor - Base (R1) :

100 k Ω

Package / Case :

TO-236-3, SC-59, SOT-23-3

Polarity :

PNP

Surface Mount :

yes

Number of Pins :

3

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Transistor Type :

PNP - Pre-Biased

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Height :

1.09mm

Transistor Application :

SWITCHING