MMBTH11

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Emitter Base Voltage (VEBO) :

3V

Factory Lead Time :

6 Weeks

Lead Free :

Lead Free

Terminal Position :

Dual

Frequency :

650MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Radiation Hardening :

No

Transition Frequency :

650MHz

hFE Min :

60

Collector Base Voltage (VCBO) :

30V

Lifecycle Status :

LIFETIME (Last Updated: 4 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Collector Emitter Breakdown Voltage :

25V

Transistor Application :

AMPLIFIER

Height :

930μm

Base Part Number :

MMBTH11

Max Collector Current :

50mA

Collector Emitter Saturation Voltage :

500mV

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

225mW

Max Breakdown Voltage :

25V

Published :

2002

Collector-Base Capacitance-Max :

0.7pF

Width :

1.3mm

Voltage - Rated DC :

25V

Terminal Form :

Gull wing

Continuous Collector Current :

50mA

Transistor Type :

NPN

Output Power :

225mW

Number of Pins :

3

Length :

2.92mm

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current Rating :

50mA

Pbfree Code :

yes

JESD-609 Code :

e3

Gain Bandwidth Product :

650MHz

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Number of Terminations :

3

Weight :

30mg

Mounting Type :

Surface Mount

Power Dissipation :

225mW

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

25V

Transistor Element Material :

SILICON