MMBTH11

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

25V

Published :

2002

ECCN Code :

EAR99

Weight :

30mg

Base Part Number :

MMBTH11

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Emitter Base Voltage (VEBO) :

3V

JESD-609 Code :

e3

Output Power :

225mW

Terminal Form :

Gull wing

Height :

930μm

Lifecycle Status :

LIFETIME (Last Updated: 4 days ago)

Max Breakdown Voltage :

25V

hFE Min :

60

Max Power Dissipation :

225mW

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

30V

Width :

1.3mm

Number of Pins :

3

Factory Lead Time :

6 Weeks

Collector Emitter Breakdown Voltage :

25V

Collector-Base Capacitance-Max :

0.7pF

Transition Frequency :

650MHz

Lead Free :

Lead Free

Frequency :

650MHz

Gain Bandwidth Product :

650MHz

Continuous Collector Current :

50mA

Element Configuration :

Single

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

NPN

Current Rating :

50mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Number of Elements :

1

Voltage - Rated DC :

25V

Radiation Hardening :

No

Transistor Type :

NPN

Mount :

Surface Mount

Pbfree Code :

yes

Length :

2.92mm

Max Collector Current :

50mA

Collector Emitter Saturation Voltage :

500mV

RoHS Status :

ROHS3 Compliant

Power Dissipation :

225mW