MMBTH10RG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Terminal Position :

Dual

ECCN Code :

EAR99

Height :

930μm

Number of Pins :

3

Collector Emitter Breakdown Voltage :

40V

Width :

1.3mm

Pbfree Code :

yes

Number of Elements :

1

Transistor Type :

NPN

hFE Min :

50

Published :

2008

Terminal Form :

Gull wing

Gain Bandwidth Product :

450MHz

Max Collector Current :

50mA

Factory Lead Time :

7 Weeks

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

40V

Mount :

Surface Mount

Output Power :

225mW

Mounting Type :

Surface Mount

Max Power Dissipation :

225mW

Voltage - Rated DC :

40V

Collector Base Voltage (VCBO) :

40V

Weight :

30mg

Emitter Base Voltage (VEBO) :

4V

Transition Frequency :

450MHz

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Base Part Number :

MMBTH10

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

-55°C~150°C TJ

Continuous Collector Current :

45mA

Current Rating :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 1mA 6V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Collector-Base Capacitance-Max :

0.6pF

Length :

2.92mm

Element Configuration :

Single

JESD-609 Code :

e3

Radiation Hardening :

No

Frequency :

450MHz