MMBTH10Q-7-F

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Mfr.Part #
MMBTH10Q-7-F
Manufacturer
Diodes Incorporated
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
RF TRANSISTOR SOT23
Stock
19,199
In Stock :
19,199

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - RF
Factory Lead Time :
19 Weeks
Current - Collector (Ic) (Max) :
50mA
Frequency - Transition :
650MHz
Operating Temperature :
-65°C~150°C TJ
Power - Max :
310mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 4mA 10V
RoHS Status :
ROHS3 Compliant
Series :
Automotive, AEC-Q101
Package / Case :
TO-236-3, SC-59, SOT-23-3
Packaging :
Tape and Reel (TR)
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Datasheets
MMBTH10Q-7-F
Introducing Transistors - Bipolar (BJT) - RF Diodes Incorporated MMBTH10Q-7-F from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, MMBTH10Q-7-F pinout, MMBTH10Q-7-F datasheet PDF, MMBTH10Q-7-F amp .Beyond Transistors - Bipolar (BJT) - RF Diodes Incorporated MMBTH10Q-7-F ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated MMBTH10Q-7-F


MMBTH10Q-7-F datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Diodes Incorporated stock available at

Diodes Inc. Transistors - Bipolar (BJT) - RF MMBTH10Q-7-F is a RF transistor designed for use in radio frequency (RF) applications. It is a NPN type transistor in a SOT23 package. It has a maximum frequency of 0.9GHz and is suitable for use in a wide range of RF applications. It has a low noise figure and high gain, making it ideal for use in high-performance RF circuits. It is also suitable for use in low-power applications, such as in wireless communication systems. The MMBTH10Q-7-F is a reliable and cost-effective solution for RF applications.
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