MMBTH10M3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Max Collector Current :

4mA

Collector Emitter Saturation Voltage :

500mV

Mounting Type :

Surface Mount

Terminal Form :

Flat

Base Part Number :

MMBTH10

Element Configuration :

Single

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

550μm

Power - Max :

265mW

JESD-609 Code :

e3

Pbfree Code :

yes

Package / Case :

SOT-723

Number of Pins :

3

Gain Bandwidth Product :

650MHz

Frequency :

650MHz

Collector Emitter Voltage (VCEO) :

25V

ECCN Code :

EAR99

Power Dissipation :

640mW

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Lead Free :

Lead Free

Transition Frequency :

650MHz

Emitter Base Voltage (VEBO) :

3V

Collector Base Voltage (VCBO) :

30V

Collector Emitter Breakdown Voltage :

25V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Width :

850μm

Pin Count :

3

Max Power Dissipation :

640mW

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Terminations :

3

Length :

1.25mm

Factory Lead Time :

2 Weeks

Number of Elements :

1

Packaging :

Tape and Reel (TR)