MMBTH10M3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Mounting Type :

Surface Mount

Max Power Dissipation :

640mW

JESD-609 Code :

e3

Width :

850μm

Collector Base Voltage (VCBO) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Power Dissipation :

640mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Length :

1.25mm

Max Collector Current :

4mA

Element Configuration :

Single

Gain Bandwidth Product :

650MHz

Terminal Form :

Flat

Number of Terminations :

3

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

25V

Pbfree Code :

yes

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

500mV

Factory Lead Time :

2 Weeks

Surface Mount :

yes

Terminal Position :

Dual

Base Part Number :

MMBTH10

Number of Elements :

1

Published :

2009

Number of Pins :

3

Height :

550μm

Collector Emitter Breakdown Voltage :

25V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power - Max :

265mW

Transition Frequency :

650MHz

Polarity/Channel Type :

NPN

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Frequency :

650MHz

Terminal Finish :

Tin (Sn)

Package / Case :

SOT-723

Emitter Base Voltage (VEBO) :

3V

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free