MMBTH10LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Max Collector Current :

500mA

Collector-Base Capacitance-Max :

0.7pF

Power Dissipation :

300mW

Number of Terminations :

3

Base Part Number :

MMBTH10

Gain Bandwidth Product :

650MHz

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

NPN

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Height :

1.11mm

Radiation Hardening :

No

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

3

hFE Min :

60

Number of Elements :

1

Transistor Element Material :

SILICON

Length :

3.04mm

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pin Count :

3

Max Power Dissipation :

225mW

Transistor Type :

NPN

Transition Frequency :

650MHz

Halogen Free :

Halogen Free

Collector Emitter Breakdown Voltage :

25V

Published :

2012

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Width :

2.64mm

Collector Emitter Voltage (VCEO) :

25V

Emitter Base Voltage (VEBO) :

3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Frequency :

650MHz

Collector Emitter Saturation Voltage :

500mV

Collector Base Voltage (VCBO) :

30V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant