MMBTH10LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

25V

Number of Pins :

3

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Collector Base Voltage (VCBO) :

30V

hFE Min :

60

Element Configuration :

Single

Height :

1.11mm

Gain Bandwidth Product :

650MHz

Factory Lead Time :

8 Weeks

Published :

2012

Lead Free :

Lead Free

Transistor Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Length :

3.04mm

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

2.64mm

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Base Part Number :

MMBTH10

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Number of Elements :

1

Terminal Position :

Dual

Halogen Free :

Halogen Free

Transistor Element Material :

SILICON

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Frequency :

650MHz

Collector Emitter Saturation Voltage :

500mV

Transition Frequency :

650MHz

Power Dissipation :

300mW

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

25V

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Max Power Dissipation :

225mW

Max Collector Current :

500mA

Collector-Base Capacitance-Max :

0.7pF

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Radiation Hardening :

No