MMBTH10LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Height :

1.11mm

Pbfree Code :

yes

Transistor Type :

NPN

Max Breakdown Voltage :

25V

Frequency :

650MHz

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Published :

2001

Transition Frequency :

650MHz

Max Power Dissipation :

225mW

Base Part Number :

MMBTH10

Number of Pins :

3

Number of Terminations :

3

Power Dissipation :

225mW

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Collector Base Voltage (VCBO) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

25V

Number of Elements :

1

JESD-609 Code :

e3

Max Junction Temperature (Tj) :

150°C

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

500mV

Voltage - Rated DC :

25V

hFE Min :

60

Surface Mount :

yes

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Width :

1.4mm

Pin Count :

3

Termination :

SMD/SMT

Halogen Free :

Halogen Free

Gain Bandwidth Product :

650MHz

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Max Collector Current :

100nA

Polarity/Channel Type :

NPN

Length :

3.04mm

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

25V

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Emitter Base Voltage (VEBO) :

3V

Terminal Form :

Gull wing

Current Rating :

4mA

Collector-Base Capacitance-Max :

0.7pF

Weight :

4.535924g

ECCN Code :

EAR99

Factory Lead Time :

8 Weeks