MMBTH10

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Contact Plating :

Tin

Weight :

30mg

Number of Elements :

1

Gain Bandwidth Product :

650MHz

Max Power Dissipation :

225mW

Polarity :

NPN

hFE Min :

60

REACH SVHC :

No SVHC

Power - Max :

225mW

RoHS Status :

RoHS Compliant

Voltage - Collector Emitter Breakdown (Max) :

25V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

930μm

Operating Temperature :

-55°C~150°C TJ

Width :

1.3mm

Transistor Type :

NPN

Continuous Collector Current :

50mA

Max Operating Temperature :

150°C

Element Configuration :

Single

Collector Base Voltage (VCBO) :

30V

Max Collector Current :

50mA

Collector Emitter Breakdown Voltage :

25V

Published :

2007

Factory Lead Time :

14 Weeks

Radiation Hardening :

No

Frequency :

650MHz

Length :

2.92mm

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Collector Emitter Voltage (VCEO) :

25V

Max Frequency :

650MHz

Emitter Base Voltage (VEBO) :

3V

Base Part Number :

MMBTH10

Supplier Device Package :

SOT-23-3 (TO-236)

Frequency - Transition :

650MHz

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

25V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mount :

Surface Mount

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Current - Collector (Ic) (Max) :

50mA

Voltage - Rated DC :

25V

Current Rating :

50mA

Power Dissipation :

225mW