MMBTH10-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - RF

Max Collector Current :

50mA

Transistor Type :

NPN

Collector-Base Capacitance-Max :

0.7pF

Published :

2008

Terminal Finish :

Matte Tin (Sn)

Voltage - Rated DC :

25V

Collector Emitter Voltage (VCEO) :

25V

Current Rating :

50mA

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

500mV

Radiation Hardening :

No

Length :

3.05mm

Lead Free :

Lead Free

hFE Min :

60

ECCN Code :

EAR99

Height :

1mm

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Pbfree Code :

yes

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Additional Feature :

High Reliability

Continuous Collector Current :

50mA

Base Part Number :

MMBTH10

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

-55°C~150°C TJ

Gain Bandwidth Product :

650MHz

Terminal Position :

Dual

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Power Dissipation :

300mW

Factory Lead Time :

15 Weeks

Number of Pins :

3

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

3V

Element Configuration :

Single

Mounting Type :

Surface Mount

Mount :

Surface Mount

Max Power Dissipation :

300mW

Max Breakdown Voltage :

25V

Weight :

7.994566mg

Frequency :

650MHz

Number of Terminations :

3

Collector Base Voltage (VCBO) :

30V

Collector Emitter Breakdown Voltage :

25V

Transition Frequency :

650MHz

Transistor Element Material :

SILICON

Pin Count :

3

Width :

1.4mm

RoHS Status :

ROHS3 Compliant