MMBTH10-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Elements :

1

Min Operating Temperature :

-55°C

Reach Compliance Code :

not_compliant

Number of Terminations :

3

Polarity :

NPN

Number of Pins :

3

Lead Free :

Contains Lead

Published :

2003

Gain Bandwidth Product :

650MHz

Max Collector Current :

50mA

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

25V

REACH SVHC :

No SVHC

Voltage - Rated DC :

25V

Length :

3.05mm

Max Power Dissipation :

300mW

Qualification Status :

Not Qualified

Pin Count :

3

hFE Min :

60

Collector Emitter Voltage (VCEO) :

25V

Weight :

7.994566mg

Collector-Base Capacitance-Max :

0.7pF

JESD-609 Code :

e0

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

3V

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Terminal Form :

Gull wing

Terminal Position :

Dual

Collector Base Voltage (VCBO) :

30V

Packaging :

Tape and Reel (TR)

Width :

1.4mm

Transistor Application :

AMPLIFIER

Current Rating :

50mA

Package / Case :

SOT-23

Time@Peak Reflow Temperature-Max (s) :

10

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1mm

Transition Frequency :

650MHz

Collector Emitter Saturation Voltage :

500mV

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

235

Terminal Finish :

Tin/Lead (Sn85Pb15)

Continuous Collector Current :

50mA

Max Breakdown Voltage :

25V