MMBTH10-4LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Max Power Dissipation :

225mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

800MHz

Factory Lead Time :

8 Weeks

Number of Elements :

1

Transistor Element Material :

SILICON

Base Part Number :

MMBTH10

Halogen Free :

Halogen Free

Surface Mount :

yes

Collector Emitter Saturation Voltage :

500mV

Collector Emitter Voltage (VCEO) :

25V

ECCN Code :

EAR99

Gain Bandwidth Product :

800MHz

Pbfree Code :

yes

hFE Min :

120

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Collector-Base Capacitance-Max :

0.7pF

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

NPN

Current Rating :

4mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 4mA 10V

Terminal Finish :

Tin (Sn)

Collector Current-Max (IC) :

0.025A

Pin Count :

3

Published :

2008

Max Breakdown Voltage :

25V

Transistor Type :

NPN

Terminal Position :

Dual

Transition Frequency :

800MHz

Number of Pins :

3

Collector Emitter Breakdown Voltage :

25V

Lead Free :

Lead Free

Voltage - Rated DC :

25V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

3V

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation :

300mW

Number of Terminations :

3

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

30V