MMBTH10-4LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Base Part Number :

MMBTH10

Surface Mount :

yes

Transistor Type :

NPN

Frequency :

800MHz

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

25V

JESD-609 Code :

e3

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Max Power Dissipation :

225mW

Emitter Base Voltage (VEBO) :

3V

Power Dissipation :

300mW

Number of Pins :

3

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Published :

2008

Number of Terminations :

3

Collector Emitter Saturation Voltage :

500mV

Transition Frequency :

800MHz

Polarity/Channel Type :

NPN

Terminal Position :

Dual

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

hFE Min :

120

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 4mA 10V

Current Rating :

4mA

Collector-Base Capacitance-Max :

0.7pF

Collector Emitter Voltage (VCEO) :

25V

Lead Free :

Lead Free

Collector Current-Max (IC) :

0.025A

ECCN Code :

EAR99

Gain Bandwidth Product :

800MHz

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Max Breakdown Voltage :

25V

Voltage - Rated DC :

25V

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

30V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

-55°C~150°C TJ