MMBTH10-4LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Current Rating :

4mA

Max Breakdown Voltage :

25V

hFE Min :

120

Radiation Hardening :

No

Voltage - Rated DC :

25V

Surface Mount :

yes

Number of Pins :

3

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Max Power Dissipation :

225mW

Transition Frequency :

800MHz

Collector Emitter Voltage (VCEO) :

25V

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 4mA 10V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Halogen Free :

Halogen Free

Number of Terminations :

3

Transistor Element Material :

SILICON

Collector Current-Max (IC) :

0.025A

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Transistor Type :

NPN

Frequency :

800MHz

Collector-Base Capacitance-Max :

0.7pF

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Base Part Number :

MMBTH10

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Pbfree Code :

yes

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Emitter Base Voltage (VEBO) :

3V

Collector Emitter Breakdown Voltage :

25V

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

Published :

2008

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Terminal Form :

Gull wing

Power Dissipation :

300mW

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

30V

Gain Bandwidth Product :

800MHz

Collector Emitter Saturation Voltage :

500mV