MMBT918LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Packaging :

Cut Tape (CT)

hFE Min :

20

Polarity/Channel Type :

NPN

Number of Pins :

3

Contact Plating :

Tin

Voltage - Rated DC :

15V

Height :

1.01mm

Factory Lead Time :

2 Weeks

Max Breakdown Voltage :

15V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Noise Figure (dB Typ @ f) :

6dB @ 60MHz

Number of Elements :

1

Max Collector Current :

50mA

Max Power Dissipation :

225mW

Collector Base Voltage (VCBO) :

30V

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 3mA 1V

Collector Emitter Voltage (VCEO) :

15V

Gain Bandwidth Product :

600MHz

Element Configuration :

Single

Pin Count :

3

Gain :

11dB

Current Rating :

50mA

Surface Mount :

yes

JESD-609 Code :

e3

Number of Terminations :

3

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

3V

Width :

1.4mm

Base Part Number :

MMBT918

Terminal Position :

Dual

REACH SVHC :

No SVHC

Length :

3.04mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

15V

Power Dissipation :

300mW

Published :

2006

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

400mV

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-236-3, SC-59, SOT-23-3

Frequency :

600MHz

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Transition Frequency :

600MHz