MMBT918LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Height :

1.01mm

Collector Emitter Breakdown Voltage :

15V

Published :

2006

Lead Free :

Lead Free

Factory Lead Time :

2 Weeks

Pbfree Code :

yes

Element Configuration :

Single

Width :

1.4mm

ECCN Code :

EAR99

hFE Min :

20

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Max Collector Current :

50mA

Radiation Hardening :

No

Package / Case :

TO-236-3, SC-59, SOT-23-3

Surface Mount :

yes

Power Dissipation :

300mW

Time@Peak Reflow Temperature-Max (s) :

40

Noise Figure (dB Typ @ f) :

6dB @ 60MHz

Transistor Element Material :

SILICON

Number of Pins :

3

Contact Plating :

Tin

Base Part Number :

MMBT918

Current Rating :

50mA

REACH SVHC :

No SVHC

Voltage - Rated DC :

15V

Mounting Type :

Surface Mount

Length :

3.04mm

RoHS Status :

ROHS3 Compliant

Gain :

11dB

Max Power Dissipation :

225mW

Transition Frequency :

600MHz

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Number of Terminations :

3

Number of Elements :

1

Packaging :

Cut Tape (CT)

Collector Emitter Saturation Voltage :

400mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Gain Bandwidth Product :

600MHz

Collector Emitter Voltage (VCEO) :

15V

Collector Base Voltage (VCBO) :

30V

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

NPN

Pin Count :

3

Emitter Base Voltage (VEBO) :

3V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 3mA 1V

Max Breakdown Voltage :

15V

Frequency :

600MHz