MMBT918LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Peak Reflow Temperature (Cel) :

260

Length :

3.04mm

Gain Bandwidth Product :

600MHz

Height :

1.01mm

ECCN Code :

EAR99

Pin Count :

3

Element Configuration :

Single

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

400mV

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Transistor Type :

NPN

Transistor Element Material :

SILICON

Factory Lead Time :

2 Weeks

Power Dissipation :

300mW

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

hFE Min :

20

Terminal Position :

Dual

Frequency :

600MHz

Max Collector Current :

50mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

225mW

Collector Base Voltage (VCBO) :

30V

Number of Pins :

3

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

Current Rating :

50mA

Voltage - Rated DC :

15V

Collector Emitter Voltage (VCEO) :

15V

Max Breakdown Voltage :

15V

Noise Figure (dB Typ @ f) :

6dB @ 60MHz

Pbfree Code :

yes

Terminal Form :

Gull wing

JESD-609 Code :

e3

Width :

1.4mm

Number of Elements :

1

Contact Plating :

Tin

Gain :

11dB

Packaging :

Cut Tape (CT)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transition Frequency :

600MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 3mA 1V

Collector Emitter Breakdown Voltage :

15V

Published :

2006

Number of Terminations :

3

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

3V

Base Part Number :

MMBT918