MMBT918

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - RF

Pbfree Code :

yes

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Breakdown Voltage :

15V

Transition Frequency :

600MHz

Transistor Element Material :

SILICON

Transistor Type :

NPN

Mount :

Surface Mount

Mounting Type :

Surface Mount

Published :

2000

Power Dissipation :

225mW

Gain :

15dB

Number of Terminations :

3

hFE Min :

20

Terminal Form :

Gull wing

Voltage - Rated DC :

15V

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Frequency :

600MHz

Factory Lead Time :

6 Weeks

Base Part Number :

MMBT918

Width :

1.3mm

Noise Figure (dB Typ @ f) :

6dB @ 60MHz

Polarity/Channel Type :

NPN

Gain Bandwidth Product :

600MHz

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Continuous Collector Current :

50mA

JESD-609 Code :

e3

Max Collector Current :

50mA

Current Rating :

50mA

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

3V

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Length :

2.92mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Elements :

1

Collector Emitter Breakdown Voltage :

15V

Collector Emitter Saturation Voltage :

400mV

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

30V

Height :

930μm

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 3mA 1V

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

15V

Transistor Application :

AMPLIFIER

Weight :

30mg

Max Power Dissipation :

225mW