MMBT918

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Height :

930μm

Transistor Element Material :

SILICON

Published :

2000

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

15V

Frequency :

600MHz

Number of Pins :

3

Transistor Type :

NPN

Emitter Base Voltage (VEBO) :

3V

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Max Collector Current :

50mA

Length :

2.92mm

Max Power Dissipation :

225mW

Continuous Collector Current :

50mA

Packaging :

Tape and Reel (TR)

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Gain Bandwidth Product :

600MHz

Lead Free :

Lead Free

JESD-609 Code :

e3

Polarity/Channel Type :

NPN

Base Part Number :

MMBT918

Voltage - Rated DC :

15V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Factory Lead Time :

6 Weeks

Max Breakdown Voltage :

15V

Power Dissipation :

225mW

Number of Elements :

1

Current Rating :

50mA

Gain :

15dB

Collector Base Voltage (VCBO) :

30V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 3mA 1V

Mount :

Surface Mount

hFE Min :

20

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Width :

1.3mm

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Collector Emitter Saturation Voltage :

400mV

Transition Frequency :

600MHz

Weight :

30mg

Collector Emitter Breakdown Voltage :

15V

Noise Figure (dB Typ @ f) :

6dB @ 60MHz

Mounting Type :

Surface Mount

ECCN Code :

EAR99