MJE5851G

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Mfr.Part #
MJE5851G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 350V 8A TO220
Stock
9,902
In Stock :
9,902

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
ECCN Code :
EAR99
Series :
SWITCHMODE™
Max Collector Current :
8A
hFE Min :
15
Transistor Type :
PNP
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
350V
Power Dissipation :
80W
Transistor Application :
SWITCHING
Max Power Dissipation :
80W
Transistor Element Material :
SILICON
Element Configuration :
Single
Packaging :
Tube
Number of Terminations :
3
JEDEC-95 Code :
TO-220AB
Vce Saturation (Max) @ Ib, Ic :
5V @ 3A, 8A
Voltage - Rated DC :
-350V
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Pbfree Code :
yes
Surface Mount :
No
Collector Base Voltage (VCBO) :
400V
Number of Elements :
1
Emitter Base Voltage (VEBO) :
6V
Terminal Finish :
Tin (Sn)
Collector Emitter Breakdown Voltage :
350V
DC Current Gain (hFE) (Min) @ Ic, Vce :
5 @ 5A 5V
Operating Temperature :
-65°C~150°C TJ
Pin Count :
3
Number of Pins :
3
Collector Emitter Saturation Voltage :
2V
Radiation Hardening :
No
Package / Case :
TO-220-3
Current Rating :
-8A
Published :
2006
Polarity/Channel Type :
PNP
Factory Lead Time :
2 Weeks
Case Connection :
COLLECTOR
Peak Reflow Temperature (Cel) :
260
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Time@Peak Reflow Temperature-Max (s) :
40
Datasheets
MJE5851G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE5851G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Package / Case:TO-220-3, MJE5851G pinout, MJE5851G datasheet PDF, MJE5851G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE5851G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE5851G


PNP -65°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

MJE5851G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 5 @ 5A 5V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 8A volts.

MJE5851G Features


the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 5V @ 3A, 8A
the emitter base voltage is kept at 6V
the current rating of this device is -8A


MJE5851G Applications


There are a lot of ON Semiconductor
MJE5851G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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