MJE2955TTU
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- Mfr.Part #
- MJE2955TTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 10A TO220-3
- Stock
- 1,129
- In Stock ：
- 1,129
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 10A
- JESD-609 Code :
- e3
- Length :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- Number of Terminations :
- 3
- Max Power Dissipation :
- 600mW
- Number of Pins :
- 3
- Width :
- 6.35mm
- Voltage - Rated DC :
- -60V
- Lead Free :
- Lead Free
- Transition Frequency :
- 2MHz
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Weight :
- 1.8g
- Power - Max :
- 75W
- Collector Base Voltage (VCBO) :
- -70V
- Collector Emitter Saturation Voltage :
- -1.1V
- Height :
- 6.35mm
- ECCN Code :
- EAR99
- Lifecycle Status :
- LIFETIME (Last Updated: 2 months ago)
- Power Dissipation :
- 600mW
- Gain Bandwidth Product :
- 2MHz
- Base Part Number :
- MJE2955
- Current - Collector Cutoff (Max) :
- 700µA
- Factory Lead Time :
- 12 Weeks
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 80V
- Mounting Type :
- Through Hole
- Max Breakdown Voltage :
- 60V
- Frequency :
- 2MHz
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- -10A
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 20
- Mount :
- Through Hole
- Published :
- 2001
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- -5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- MJE2955TTU
MJE2955TTU Documents
PNP 150°C TJ 700μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
MJE2955TTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 4V.With a collector emitter saturation voltage of -1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 8V @ 3.3A, 10A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -10A.A transition frequency of 2MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 10A volts at its maximum.
MJE2955TTU Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of -1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
a transition frequency of 2MHz
MJE2955TTU Applications
There are a lot of ON Semiconductor
MJE2955TTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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