MJE2955TTU
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- Mfr.Part #
- MJE2955TTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 10A TO220-3
- Stock
- 1,129
- In Stock ：
- 1,129
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Height :
- 6.35mm
- Packaging :
- Tube
- Power - Max :
- 75W
- Max Collector Current :
- 10A
- Mount :
- Through Hole
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Frequency :
- 2MHz
- Pbfree Code :
- yes
- Length :
- 6.35mm
- Number of Pins :
- 3
- Max Power Dissipation :
- 600mW
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- -70V
- Lifecycle Status :
- LIFETIME (Last Updated: 2 months ago)
- Base Part Number :
- MJE2955
- Factory Lead Time :
- 12 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Gain Bandwidth Product :
- 2MHz
- Current - Collector Cutoff (Max) :
- 700µA
- Transistor Type :
- PNP
- Current Rating :
- -10A
- Collector Emitter Breakdown Voltage :
- 80V
- Voltage - Rated DC :
- -60V
- Width :
- 6.35mm
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 8V @ 3.3A, 10A
- Transition Frequency :
- 2MHz
- Emitter Base Voltage (VEBO) :
- -5V
- JESD-609 Code :
- e3
- hFE Min :
- 20
- Collector Emitter Saturation Voltage :
- -1.1V
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Power Dissipation :
- 600mW
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2001
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Weight :
- 1.8g
- Max Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Datasheets
- MJE2955TTU
PNP 150°C TJ 700μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
MJE2955TTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 4V.With a collector emitter saturation voltage of -1.1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 8V @ 3.3A, 10A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -10A.A transition frequency of 2MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 10A volts at its maximum.
MJE2955TTU Features
the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of -1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
a transition frequency of 2MHz
MJE2955TTU Applications
There are a lot of ON Semiconductor
MJE2955TTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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