MJE210G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 2A 1V

Transistor Application :

AMPLIFIER

Packaging :

Bulk

Collector Emitter Saturation Voltage :

1.8V

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

40V

Package / Case :

TO-225AA, TO-126-3

Voltage - Rated DC :

-25V

Current Rating :

-5A

Height :

11.0998mm

Emitter Base Voltage (VEBO) :

8V

Element Configuration :

Single

Length :

7.7978mm

Frequency :

65MHz

hFE Min :

70

Lead Free :

Lead Free

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1A, 5A

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

Max Power Dissipation :

15W

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

25V

Polarity/Channel Type :

PNP

Width :

2.9972mm

Gain Bandwidth Product :

65MHz

Base Part Number :

MJE210

Published :

2000

Max Collector Current :

5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Power Dissipation :

15W

Transition Frequency :

65MHz

Weight :

4.535924g

ECCN Code :

EAR99

Surface Mount :

No

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

40V

Pin Count :

3

Factory Lead Time :

7 Weeks

Mounting Type :

Through Hole

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Operating Temperature :

-65°C~150°C TJ