MJE210G
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- Mfr.Part #
- MJE210G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 5A TO126
- Stock
- 74
- In Stock ：
- 74
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 40V
- Weight :
- 4.535924g
- Base Part Number :
- MJE210
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 1.8V
- Mounting Type :
- Through Hole
- Length :
- 7.7978mm
- Gain Bandwidth Product :
- 65MHz
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Frequency :
- 65MHz
- Height :
- 11.0998mm
- Factory Lead Time :
- 7 Weeks
- Max Collector Current :
- 5A
- Voltage - Rated DC :
- -25V
- hFE Min :
- 70
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Application :
- AMPLIFIER
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 15W
- Packaging :
- Bulk
- Current Rating :
- -5A
- Width :
- 2.9972mm
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -65°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Emitter Base Voltage (VEBO) :
- 8V
- REACH SVHC :
- No SVHC
- Published :
- 2000
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Max Power Dissipation :
- 15W
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 25V
- Pin Count :
- 3
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Number of Pins :
- 3
- Transition Frequency :
- 65MHz
- Collector Emitter Breakdown Voltage :
- 40V
- Datasheets
- MJE210G
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PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
MJE210G Overview
In this device, the DC current gain is 45 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1A, 5A.With the emitter base voltage set at 8V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 65MHz.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
MJE210G Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is -5A
a transition frequency of 65MHz
MJE210G Applications
There are a lot of ON Semiconductor
MJE210G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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