MJE210T

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

hFE Min :

70

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1A, 5A

Current - Collector Cutoff (Max) :

100nA ICBO

Base Part Number :

MJE210

Max Power Dissipation :

15W

JESD-609 Code :

e0

Operating Temperature :

-65°C~150°C TJ

Polarity/Channel Type :

PNP

Package / Case :

TO-225AA, TO-126-3

RoHS Status :

Non-RoHS Compliant

Voltage - Rated DC :

-25V

Packaging :

Bulk

Surface Mount :

No

Gain Bandwidth Product :

65MHz

Transistor Type :

PNP

Max Collector Current :

5A

Number of Pins :

3

Reach Compliance Code :

not_compliant

Pin Count :

3

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Emitter Base Voltage (VEBO) :

8V

Current Rating :

-5A

Collector Base Voltage (VCBO) :

40V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Contains Lead

Published :

2009

Number of Terminations :

3

Terminal Finish :

Tin/Lead (Sn/Pb)

Element Configuration :

Single

Collector Emitter Saturation Voltage :

1.8V

Collector Emitter Voltage (VCEO) :

1.8V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 2A 1V

Transition Frequency :

65MHz

Transistor Application :

AMPLIFIER

Number of Elements :

1

Current - Collector (Ic) (Max) :

5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

40V