MJE210T
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- Mfr.Part #
- MJE210T
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 5A TO126
- Stock
- 9,148
- In Stock ：
- 9,148
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 5A
- Operating Temperature :
- -65°C~150°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 40V
- Emitter Base Voltage (VEBO) :
- 8V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Rated DC :
- -25V
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current - Collector (Ic) (Max) :
- 5A
- Packaging :
- Bulk
- Surface Mount :
- No
- Reach Compliance Code :
- not_compliant
- Collector Emitter Saturation Voltage :
- 1.8V
- Polarity/Channel Type :
- PNP
- Current Rating :
- -5A
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- hFE Min :
- 70
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e0
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- MJE210
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 15W
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 1.8V
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 65MHz
- Transition Frequency :
- 65MHz
- Collector Base Voltage (VCBO) :
- 40V
- Published :
- 2009
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Lead Free :
- Contains Lead
- Number of Elements :
- 1
- Pin Count :
- 3
- Datasheets
- MJE210T
MJE210T Documents
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PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
MJE210T Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 45 @ 2A 1V.With a collector emitter saturation voltage of 1.8V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.8V @ 1A, 5A.If the emitter base voltage is kept at 8V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -5A.A transition frequency of 65MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
MJE210T Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is -5A
a transition frequency of 65MHz
MJE210T Applications
There are a lot of ON Semiconductor
MJE210T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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