MJE200

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

40V

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 2A 1V

Element Configuration :

Single

Radiation Hardening :

No

Max Power Dissipation :

15W

Collector Emitter Saturation Voltage :

1.8V

Packaging :

Bulk

Lead Free :

Lead Free

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

25V

Pbfree Code :

yes

Max Collector Current :

5A

Published :

2000

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Transition Frequency :

65MHz

Current Rating :

5A

Factory Lead Time :

13 Weeks

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Weight :

4.535924g

Peak Reflow Temperature (Cel) :

260

Length :

7.7978mm

Frequency :

65MHz

Base Part Number :

MJE200

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current - Collector Cutoff (Max) :

100nA ICBO

Operating Temperature :

-65°C~150°C TJ

Gain Bandwidth Product :

65MHz

Width :

2.9972mm

Collector Emitter Breakdown Voltage :

40V

REACH SVHC :

No SVHC

Polarity/Channel Type :

NPN

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1A, 5A

hFE Min :

70

Transistor Application :

AMPLIFIER

Emitter Base Voltage (VEBO) :

8V

Surface Mount :

No

ECCN Code :

EAR99

Height :

11.0998mm

Package / Case :

TO-225AA, TO-126-3

Power Dissipation :

15W

Voltage - Rated DC :

25V

Transistor Element Material :

SILICON