MJE243
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- Mfr.Part #
- MJE243
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PWR NPN 4A 100V TO225AA
- Stock
- 21,081
- In Stock ：
- 21,081
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 40MHz
- Max Collector Current :
- 4A
- Factory Lead Time :
- 6 Weeks
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Packaging :
- Bulk
- hFE Min :
- 40
- Radiation Hardening :
- No
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Gain Bandwidth Product :
- 40MHz
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 100V
- Height :
- 11.0998mm
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Width :
- 2.9972mm
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 1V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Max Power Dissipation :
- 15W
- Operating Temperature :
- -65°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Halogen Free :
- Halogen Free
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.5W
- Emitter Base Voltage (VEBO) :
- 7V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 40MHz
- Voltage - Rated DC :
- 100V
- Collector Emitter Saturation Voltage :
- 600mV
- Collector Base Voltage (VCBO) :
- 100V
- Current Rating :
- 4A
- Length :
- 7.7978mm
- REACH SVHC :
- No SVHC
- Weight :
- 4.535924g
- Datasheets
- MJE243
MJE243 Documents
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NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
MJE243G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 200mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 4A volts.
MJE243G Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz
MJE243G Applications
There are a lot of ON Semiconductor
MJE243G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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