MJE243
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- Mfr.Part #
- MJE243
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PWR NPN 4A 100V TO225AA
- Stock
- 21,081
- In Stock ：
- 21,081
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Weight :
- 4.535924g
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 1.5W
- ECCN Code :
- EAR99
- Package / Case :
- TO-225AA, TO-126-3
- Emitter Base Voltage (VEBO) :
- 7V
- Voltage - Rated DC :
- 100V
- Max Collector Current :
- 4A
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 11.0998mm
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Transition Frequency :
- 40MHz
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 15W
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 1V
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Length :
- 7.7978mm
- hFE Min :
- 40
- Gain Bandwidth Product :
- 40MHz
- Halogen Free :
- Halogen Free
- Published :
- 2006
- Collector Base Voltage (VCBO) :
- 100V
- Current Rating :
- 4A
- Collector Emitter Saturation Voltage :
- 600mV
- Factory Lead Time :
- 6 Weeks
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 100V
- Frequency :
- 40MHz
- Collector Emitter Breakdown Voltage :
- 100V
- Width :
- 2.9972mm
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~150°C TJ
- Surface Mount :
- No
- Packaging :
- Bulk
- Pin Count :
- 3
- Datasheets
- MJE243
MJE243 Documents
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NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
MJE243G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 200mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 4A volts.
MJE243G Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz
MJE243G Applications
There are a lot of ON Semiconductor
MJE243G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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