MJE243
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- Mfr.Part #
- MJE243
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PWR NPN 4A 100V TO225AA
- Stock
- 21,081
- In Stock ：
- 21,081
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 15W
- Surface Mount :
- No
- Gain Bandwidth Product :
- 40MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Collector Emitter Saturation Voltage :
- 600mV
- Power Dissipation :
- 1.5W
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 100V
- Factory Lead Time :
- 6 Weeks
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 100V
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Width :
- 2.9972mm
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Packaging :
- Bulk
- Published :
- 2006
- Max Collector Current :
- 4A
- Height :
- 11.0998mm
- Operating Temperature :
- -65°C~150°C TJ
- hFE Min :
- 40
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 40MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 7.7978mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 1V
- Frequency :
- 40MHz
- Number of Terminations :
- 3
- Current Rating :
- 4A
- Polarity/Channel Type :
- NPN
- Weight :
- 4.535924g
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 7V
- Datasheets
- MJE243
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NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
MJE243G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 200mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 4A volts.
MJE243G Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz
MJE243G Applications
There are a lot of ON Semiconductor
MJE243G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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