MJE210STU
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- Mfr.Part #
- MJE210STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 5A TO126-3
- Stock
- 3,354
- In Stock ：
- 3,354
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Emitter Voltage (VCEO) :
- 25V
- Max Power Dissipation :
- 15W
- Published :
- 2001
- hFE Min :
- 45
- Height :
- 11mm
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Max Collector Current :
- 5A
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 6 Weeks
- Emitter Base Voltage (VEBO) :
- -8V
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -1.8V
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- -25V
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- MJE210
- Max Breakdown Voltage :
- 25V
- Width :
- 3.25mm
- Length :
- 8mm
- Power Dissipation :
- 15W
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Current Rating :
- -5A
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 20V
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- -40V
- Frequency :
- 65MHz
- Weight :
- 761mg
- Transition Frequency :
- 65MHz
- Gain Bandwidth Product :
- 65MHz
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Package / Case :
- TO-225AA, TO-126-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Contact Plating :
- Tin
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Datasheets
- MJE210STU
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
MJE210STU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 45 @ 2A 1V DC current gain.As it features a collector emitter saturation voltage of -1.8V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -8V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 65MHz in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 5A volts.
MJE210STU Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of -1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
the current rating of this device is -5A
a transition frequency of 65MHz
MJE210STU Applications
There are a lot of ON Semiconductor
MJE210STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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