MJE243G
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- Mfr.Part #
- MJE243G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A TO126
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 11.0998mm
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 600mV
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pbfree Code :
- yes
- Factory Lead Time :
- 6 Weeks
- Polarity/Channel Type :
- NPN
- hFE Min :
- 40
- Transition Frequency :
- 40MHz
- Width :
- 2.9972mm
- Max Power Dissipation :
- 15W
- Emitter Base Voltage (VEBO) :
- 7V
- Weight :
- 4.535924g
- Published :
- 2006
- Surface Mount :
- No
- Max Collector Current :
- 4A
- Gain Bandwidth Product :
- 40MHz
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Package / Case :
- TO-225AA, TO-126-3
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Current Rating :
- 4A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Base Voltage (VCBO) :
- 100V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Length :
- 7.7978mm
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Packaging :
- Bulk
- Number of Elements :
- 1
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 1V
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Collector Emitter Voltage (VCEO) :
- 100V
- Power Dissipation :
- 1.5W
- Operating Temperature :
- -65°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Halogen Free :
- Halogen Free
- Frequency :
- 40MHz
- Datasheets
- MJE243G
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NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
MJE243G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 200mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 4A volts.
MJE243G Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz
MJE243G Applications
There are a lot of ON Semiconductor
MJE243G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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