MJE253G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

3

Contact Plating :

Tin

Number of Elements :

1

Transistor Element Material :

SILICON

Package / Case :

TO-225AA, TO-126-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

7V

Lead Free :

Lead Free

Voltage - Rated DC :

-100V

Halogen Free :

Halogen Free

Width :

2.66mm

Transistor Application :

SWITCHING

Surface Mount :

No

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Voltage (VCEO) :

100V

Frequency :

40MHz

Radiation Hardening :

No

Max Power Dissipation :

15W

Pin Count :

3

Length :

7.74mm

REACH SVHC :

No SVHC

Power Dissipation :

1.5W

Collector Base Voltage (VCBO) :

100V

Collector Emitter Breakdown Voltage :

100V

Current Rating :

-4A

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA 1V

ECCN Code :

EAR99

Element Configuration :

Single

Transistor Type :

PNP

hFE Min :

40

Mounting Type :

Through Hole

Collector Emitter Saturation Voltage :

600mV

Height :

11.04mm

Factory Lead Time :

5 Weeks

Polarity/Channel Type :

PNP

Current - Collector Cutoff (Max) :

100nA ICBO

Gain Bandwidth Product :

40MHz

Max Collector Current :

4A

JESD-609 Code :

e3

Pbfree Code :

yes

Transition Frequency :

40MHz

Published :

2006

Weight :

4.535924g

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Bulk