MJE253G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA 1V

Radiation Hardening :

No

Halogen Free :

Halogen Free

Mounting Type :

Through Hole

Number of Elements :

1

Gain Bandwidth Product :

40MHz

Collector Base Voltage (VCBO) :

100V

Transition Frequency :

40MHz

Transistor Element Material :

SILICON

Max Collector Current :

4A

hFE Min :

40

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Number of Terminations :

3

Operating Temperature :

-65°C~150°C TJ

Pin Count :

3

Element Configuration :

Single

Contact Plating :

Tin

Power Dissipation :

1.5W

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

7V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Surface Mount :

No

Length :

7.74mm

Collector Emitter Saturation Voltage :

600mV

Published :

2006

Collector Emitter Voltage (VCEO) :

100V

Factory Lead Time :

5 Weeks

Transistor Type :

PNP

JESD-609 Code :

e3

Max Power Dissipation :

15W

Voltage - Rated DC :

-100V

Height :

11.04mm

Polarity/Channel Type :

PNP

Weight :

4.535924g

Width :

2.66mm

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Frequency :

40MHz

Package / Case :

TO-225AA, TO-126-3

Number of Pins :

3

Current Rating :

-4A

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

100V

Packaging :

Bulk

REACH SVHC :

No SVHC