MJE253G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Published :

2006

Transistor Element Material :

SILICON

Element Configuration :

Single

Current Rating :

-4A

Weight :

4.535924g

RoHS Status :

ROHS3 Compliant

Packaging :

Bulk

Polarity/Channel Type :

PNP

Operating Temperature :

-65°C~150°C TJ

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Length :

7.74mm

Height :

11.04mm

Emitter Base Voltage (VEBO) :

7V

Collector Emitter Voltage (VCEO) :

100V

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-609 Code :

e3

Number of Pins :

3

Factory Lead Time :

5 Weeks

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

100V

Frequency :

40MHz

Max Collector Current :

4A

REACH SVHC :

No SVHC

Pin Count :

3

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA 1V

Gain Bandwidth Product :

40MHz

ECCN Code :

EAR99

Lead Free :

Lead Free

Package / Case :

TO-225AA, TO-126-3

Transistor Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Transistor Application :

SWITCHING

Transition Frequency :

40MHz

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

-100V

Collector Base Voltage (VCBO) :

100V

Width :

2.66mm

Mounting Type :

Through Hole

Max Power Dissipation :

15W

hFE Min :

40

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Halogen Free :

Halogen Free

Collector Emitter Saturation Voltage :

600mV

Power Dissipation :

1.5W

Contact Plating :

Tin