MJE200G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Width :

2.9972mm

Collector Emitter Breakdown Voltage :

40V

Transistor Application :

AMPLIFIER

Number of Elements :

1

Power Dissipation :

15W

Gain Bandwidth Product :

65MHz

Collector Emitter Voltage (VCEO) :

25V

Transistor Type :

NPN

Number of Terminations :

3

Mounting Type :

Through Hole

Surface Mount :

No

Transistor Element Material :

SILICON

Packaging :

Bulk

RoHS Status :

ROHS3 Compliant

Height :

11.0998mm

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

15W

Package / Case :

TO-225AA, TO-126-3

Length :

7.7978mm

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

13 Weeks

Max Collector Current :

5A

Transition Frequency :

65MHz

ECCN Code :

EAR99

Pbfree Code :

yes

Published :

2000

Frequency :

65MHz

Emitter Base Voltage (VEBO) :

8V

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 2A 1V

Collector Emitter Saturation Voltage :

1.8V

Peak Reflow Temperature (Cel) :

260

Weight :

4.535924g

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1A, 5A

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-65°C~150°C TJ

REACH SVHC :

No SVHC

Base Part Number :

MJE200

Voltage - Rated DC :

25V

Pin Count :

3

hFE Min :

70

Current Rating :

5A

Lead Free :

Lead Free

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

40V