MJE200G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

1.8V

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1A, 5A

Collector Emitter Voltage (VCEO) :

25V

Element Configuration :

Single

Transistor Type :

NPN

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

40V

hFE Min :

70

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

65MHz

Weight :

4.535924g

JESD-609 Code :

e3

Polarity/Channel Type :

NPN

Number of Elements :

1

Max Power Dissipation :

15W

Length :

7.7978mm

Voltage - Rated DC :

25V

Pbfree Code :

yes

Power Dissipation :

15W

Transistor Element Material :

SILICON

Current Rating :

5A

Frequency :

65MHz

Published :

2000

Time@Peak Reflow Temperature-Max (s) :

40

Height :

11.0998mm

Terminal Finish :

Tin (Sn)

Package / Case :

TO-225AA, TO-126-3

Radiation Hardening :

No

Factory Lead Time :

13 Weeks

Lead Free :

Lead Free

Number of Terminations :

3

Number of Pins :

3

Operating Temperature :

-65°C~150°C TJ

Mounting Type :

Through Hole

Transition Frequency :

65MHz

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

Pin Count :

3

Packaging :

Bulk

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Base Voltage (VCBO) :

40V

Surface Mount :

No

Emitter Base Voltage (VEBO) :

8V

Base Part Number :

MJE200

Width :

2.9972mm

Max Collector Current :

5A

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 2A 1V

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

260