MJE200G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Transition Frequency :

65MHz

Transistor Element Material :

SILICON

Pin Count :

3

Emitter Base Voltage (VEBO) :

8V

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

40V

Transistor Type :

NPN

Terminal Finish :

Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1A, 5A

Lead Free :

Lead Free

JESD-609 Code :

e3

Width :

2.9972mm

hFE Min :

70

Radiation Hardening :

No

Weight :

4.535924g

Frequency :

65MHz

Pbfree Code :

yes

Operating Temperature :

-65°C~150°C TJ

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

Power Dissipation :

15W

Polarity/Channel Type :

NPN

Base Part Number :

MJE200

Transistor Application :

AMPLIFIER

Voltage - Rated DC :

25V

Length :

7.7978mm

Surface Mount :

No

Height :

11.0998mm

Number of Pins :

3

Packaging :

Bulk

Current Rating :

5A

Number of Terminations :

3

Package / Case :

TO-225AA, TO-126-3

Max Collector Current :

5A

Collector Emitter Saturation Voltage :

1.8V

Mounting Type :

Through Hole

Max Power Dissipation :

15W

Collector Emitter Breakdown Voltage :

40V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

25V

Published :

2000

Gain Bandwidth Product :

65MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 2A 1V

Factory Lead Time :

13 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)