MJE200G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

3

Max Collector Current :

5A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Element Material :

SILICON

Published :

2000

Frequency :

65MHz

Voltage - Rated DC :

25V

Base Part Number :

MJE200

Current Rating :

5A

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

25V

Transistor Application :

AMPLIFIER

Power Dissipation :

15W

Current - Collector Cutoff (Max) :

100nA ICBO

Gain Bandwidth Product :

65MHz

Pbfree Code :

yes

Number of Elements :

1

JESD-609 Code :

e3

Operating Temperature :

-65°C~150°C TJ

Width :

2.9972mm

Weight :

4.535924g

Height :

11.0998mm

Emitter Base Voltage (VEBO) :

8V

Packaging :

Bulk

Max Power Dissipation :

15W

Pin Count :

3

Surface Mount :

No

Length :

7.7978mm

Element Configuration :

Single

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1A, 5A

Factory Lead Time :

13 Weeks

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Mounting Type :

Through Hole

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 2A 1V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

1.8V

Terminal Finish :

Tin (Sn)

Collector Base Voltage (VCBO) :

40V

Polarity/Channel Type :

NPN

REACH SVHC :

No SVHC

Number of Terminations :

3

Transition Frequency :

65MHz

Package / Case :

TO-225AA, TO-126-3

Collector Emitter Breakdown Voltage :

40V

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

70